SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
The paper represents the electrical behaviour of a new Gallium Arsenide (GaAs) power Schottky Diode compared to the bipolar silicon diodes. The paper also introduces its electrical measurements ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier ...
America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage ...
I n an idealized diode, no reverse current flows from cathode to anode when the device is reverse-biased. However, with real-world diodes, large amounts of stored charge can flow from the cathode—back ...
(Nanowerk News) After a 10-year research study (Nature Communications, "Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap") that started by ...
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