The material, called hexagonal boron nitride (hBN), is used in semiconductor devices and can also enhance the performance of other two-dimensional (2D) materials such as graphene and transition ...

The work by researchers in the Center for Advanced Semiconductor Technologies could lead to energy-efficient microelectronics ...

Boron-containing semiconductor materials, particularly boron aluminum nitride (BAlN) and boron gallium nitride (BGaN), are gaining attention in the field of electronics due to their potential for ...

It also has a good bandgap, making it very attractive as a semiconductor material. In fact, only diamond and isotopically enriched cubic boron nitride have better thermal conductivity.

“This collaboration highlights UB’s leadership in cutting-edge semiconductor research and its ability ... or insulator h-BN [hexagonal boron nitride], they can play different roles in the charge ...

Recent research has focused on exploring new semiconductor materials, particularly various allotropes of carbon and boron nitride, as well as silicon-carbon alloys. These studies aim to enhance ...

A main focus of our research lies in exploiting wide and ultra-wide bandgap semiconductors including GaN, Gallium Oxide, Boron Nitride and Diamond to develop next-generation power and RF devices. We ...

Previously, boron-doped diamonds were known to conduct electricity and become superconductors, but not to have plasmonic properties. Unlike metals or even other doped semiconductors, boron-doped ...

The modified material was then exposed to flowing ammonia at 1000 °C, which resulted in sodium-doped amorphous silicon-boron-nitride (Na-doped SiBN). Using cutting-edge spectroscopic techniques ...