A new technical paper titled “Lateral Semiconductor–Free-Space Gate Transistors” was published by researchers at KAUST and the Indian Institute of Technology.

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration. (Nanowerk News) Researchers ...

Tokyo, Japan – Hailed as one of the greatest inventions of the 20 th century, transistors are integral components of modern electronics that amplify or switch electrical signals. As electronics become ...

In brief: While covering a wide range of topics during his keynote at Nvidia's GTC, CEO Jensen Huang briefly touched on the company's GPU roadmap beyond the upcoming Rubin architecture. The Feynman ...

For decades, the speed of transistors has been approaching its physical limit. Now, researchers have built a new type of vacuum/air channel electron tube that completely eliminates a fatal flaw that ...